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arXiv 0806.4955cond-mat.mtrl-sciquant-ph

Hot-electron noise suppression in n-Si via the Hall effect

F. Ciccarello, S. Zammito, M. Zarcone

英文摘要:

We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.

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