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arXiv 0806.4025cond-mat.str-el
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二维有机导体$α$ -(BEDT-TTF)$_2$ I $_3$中狄拉克锥附近的电子性质

Electronic Properties Close to Dirac Cone in Two-Dimensional Organic Conductor $α$-(BEDT-TTF)$_2$I$_3$

Shinya Katayama, Akito Kobayashi, Yoshikazu Suzumura

摘要:

在二维有机导体$α$ -(BEDT-TTF)$_2$ I $_3$盐体系中发现了零能隙态(ZGS)。本文详细分析了ZGS的特性,并研究了导带和价带简并形成零带隙的接触点附近的电子性质。能带的本征向量具有各自位点的四个分量,其中两个对应于不等价位点,另外两个对应于等价位点。结果表明,前者表现出一个奇异的动量依赖性周围的接触点和后者显示几乎恒定的依赖性。计算了费米点附近各位置的态密度,揭示了局域磁化率和局域核磁弛豫率随温度的变化关系。此外,ZGS对阴离子电位的鲁棒性也显示通过使用二阶微扰。

英文摘要:

A zero-gap state (ZGS) has been found in a bulk system of two-dimensional organic conductor, $α$-(BEDT-TTF)$_2$I$_3$ salt which consists of four sites of donor molecules in a unit cell. In the present paper, the characteristic of the ZGS is analyzed in detail and the electronic properties are examined in the vicinity of the contact point where the conduction and valence bands degenerate to form the zero-gap. The eigenvectors of the energy band have four components of respective sites, where two of them correspond to inequivalent sites and the other two correspond to equivalent sites. It is shown that the former exhibits an exotic momentum dependence around the contact point and the latter shows almost a constant dependence. The density of states of each site close to the Fermi point is calculated to demonstrate the temperature dependence of the local magnetic susceptibility and the local nuclear magnetic relaxation rate. Further, the robust property of the ZGS against the anion potential is also shown by using the second-order perturbation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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