寻找SET结构中岛的临界温度的方法
Method for finding the critical temperature of the island in a SET structure
摘要：
本文提出了一种测量超导单电子晶体管岛的临界温度的方法。该方法是基于作为温度的函数的零偏压电导的斜率的急剧变化。我们用这种方法测定了铝引线超导单电子晶体管Nb岛的超导相变温度。我们得到$T_\mathrm{c}^\mathrm{Nb}$高达8.5 K和间隙能量高达$Δ_\mathrm{Nb}\simeq 1.45$ meV。通过观察作为磁场而不是温度的函数的零偏置电导，也可以确定岛的临界场。利用正统理论，我们已经进行了广泛的数值模拟的电荷输运性质在SET的温度可比的差距，这匹配非常好的数据，从而为我们的方法提供了坚实的理论基础。
英文摘要：
We present a method to measure the critical temperature of the island of a superconducting single electron transistor. The method is based on a sharp change in the slope of the zero-bias conductance as a function of temperature. We have used this method to determine the superconducting phase transition temperature of the Nb island of an superconducting single electron transistor with Al leads. We obtain $T_\mathrm{c}^\mathrm{Nb}$ as high as 8.5 K and gap energies up to $Δ_\mathrm{Nb}\simeq 1.45$ meV. By looking at the zero bias conductance as a function of magnetic field instead of temperature, also the critical field of the island can be determined. Using the orthodox theory, we have performed extensive numerical simulations of charge transport properties in the SET at temperatures comparable to the gap, which match very well the data, therefore providing a solid theoretical basis for our method.
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