硅纳米晶在a-SiOx中对<Er>谐振器结构中应用的C波段发射的影响
Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures
摘要：
通过高温退火产生a-SiOx中的Si纳米晶体（Si-NC）<Er>。Si-NC样品在700 ~ 1000 nm的宽带区有很强的发光。退火温度，退火时间，衬底类型，和铒浓度进行了研究，以允许在1550 nm处的发射forsamples与铒。在C带区域的发射大大减少了Si-NC的存在。这种减少可能是由于从纳米晶体比从非晶基质到Er 3+离子的能量转移过程效率较低，可能是由于在非晶表面形成更中心对称的Er 3+位点或非晶和结晶样品之间非常不同的最佳铒浓度。
英文摘要：
Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.
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