氧化物体系中体电阻开关和界面电阻开关的统一
Unification of bulk and interface electroresistive switching in oxide systems
摘要：
我们证明了氧化物肖特基系统中的电阻开关背后的物理机制是电铸，在绝缘氧化物。滞后电流-电压曲线所示的负电阻证明了碰撞电离是开关的起源。通过一个简单的模型，电容-电压和电导-电压曲线的分析表明，在该过程中涉及的原子重排。在这些系统中的切换是一种体效应，不严格限制在界面，但在电荷空间区域。
英文摘要：
We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.
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