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arXiv 0804.2669cond-mat.str-el
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半导体量子点中的Landau-Zener跃迁

Landau-Zener transitions in a semiconductor quantum dot

G. E. Murgida, D. A. Wisniacki, P. I. Tamborenea

摘要:

研究了具有两个相互作用电子的准一维半导体量子点在线性时变电场作用下的能级跃迁。我们分析了简单的两能级Landau-Zener模型描述这一现实系统中概率幅演化的适用性。我们发现,朗道-齐纳模型的工作很好,当它被认为是在绝热的基础上,但它不是强大的非绝热的基础。

英文摘要:

We study the transitions between neighboring energy levels in a quasi-one-dimensional semiconductor quantum dot with two interacting electrons in it, when it is subject to a linearly time-dependent electric field. We analyze the applicability of simple two-level Landau-Zener model to describe the evolution of the probability amplitudes in this realistic system. We show that the Landau-Zener model works very well when it is viewed in the adibatic basis, but it is not as robust in the diabatic basis.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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