镶嵌硅纳米晶中光开关参数和三阶光学非线性增强的理论研究
Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: a theoretical assessment
摘要：
用原子赝势方法研究了镶嵌在宽禁带硅基质中的硅纳米晶的三阶束缚电荷电子非线性。非线性折射率，双光子吸收和光学开关参数的检查，从小团簇到NC的大小为3 nm。与体值相比，硅纳米晶显示出更高的三阶光学非线性和更宽的双光子吸收阈值，这引起了光开关参数的增强。
英文摘要：
Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption threshold which gives rise to enhancement in the optical switching parameter.
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