碱金属诱导的InAs（110）解理面费米能级和二维电子
Alkali-metal-induced Fermi level and two dimensional electrons at cleaved InAs(110) surfaces
摘要：
低温霍尔测量已经进行了二维电子气（2DEG）诱导的Cs或Na的沉积在原位解理表面的p型InAs。的表面施主能级，在那里的费米能的2DEG被钉扎，计算从所观察到的饱和表面电子密度使用的表面电位确定自洽。与以前的光电子能谱学测量结果进行了比较。
英文摘要：
Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The surface donor level, at which the Fermi energy of the 2DEG is pinned, is calculated from the observed saturation surface electron density using a surface potential determined self-consistently. The results are compared to those of previous photoelectron spectroscopy measurements.
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