强磁场和偏置电流下量子点接触非线性响应的真实模拟
Realistic modelling of quantum point contacts subject to high magnetic fields and with current bias at out of linear response regime
摘要：
研究了量子点接触附近的电子和电流密度分布。一个三维泊松方程求解自洽获得电子密度和电位分布的情况下，外部磁场的栅极和蚀刻定义的设备。我们观察到的表面电荷和它们的约束电位的明显效果，当考虑（深）蚀刻QPC。在外部磁场的存在下，我们研究了不可压缩带的形成及其对线性响应和非线性响应电流分布的影响。一个空间不对称的载流不可压缩的条带，诱导的大源漏电压，报告这种设备在非线性制度。
英文摘要：
The electron and current density distributions in the close proximity of quantum point contacts (QPCs) are investigated. A three dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the (deeply) etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the non-linear regime.
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