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arXiv 0803.0993cond-mat.mes-hall
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具有Fano反共振的自旋反转器件

Spin inversion devices with Fano anti-resonances

J. L. Cardoso, P. Pereyra

摘要:

分析了在均匀倾斜磁场作用下准二维电子气在半导体波导中的自旋输运,发现了自旋载流子共振和反共振输运的选择规则.基于这些选择规则和由磁场强度和倾斜角引起的能带位移,我们提出了一种有效的自旋反转器件。对于极化入射电子束,我们可以确定从我们的理论方法,自旋反转效率高达80%的物理条件。我们可视化这一机制的电导和空间行为的波函数振幅沿超晶格。

英文摘要:

Analyzing spin transport of quasi-2D electrons gas moving through a semiconductor wave guide subject to a sectionally homogeneous tilted magnetic field, we found well-defined selection rules for resonant and antiresonant spin carrier transmission. Based on these selection rules and the band shift induced by the magnetic field strength and the tilting angles, we propose an efficient spin inversion device. For a polarized incoming electron beam, we can determine from our theoretical approach, physical conditions for spin-inversion efficiency up to 80%. We visualize this mechanism in terms of conductance and the spacial behavior of the wave function amplitude along the superlattice.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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