GaN/AlN量子点的偏振发射：单点光谱和量子力学理论
Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory
摘要：
报道了在Si（111）衬底上沿（0001）晶轴生长的GAN/AlN单量子点的显微光致发光研究。发射线沿生长平面表现出线性偏振，但具有不同的偏振度大小，并且具有不一定对应于结晶方向的主偏振轴。此外，我们不能观察到任何分裂的偏振发射线，至少在我们的设置（1毫电子伏）的光谱分辨率。我们提出了一个模型的基础上的电子-空穴交换相互作用和应变和/或量子点形状的面内各向异性的联合效应，以解释我们的观察和以前报道的，例如CdTe或InAs为基础的量子点之间的定量差异。
英文摘要：
We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover, we could not observe any splitting of polarized emission lines, at least within the spectral resolution of our setup (1 meV). We propose a model based on the joint effects of electron-hole exchange interaction and in-plane anisotropy of strain and/or quantum dot shape, in order to explain the quantitative differences between our observations and those previously reported on, e.g. CdTe- or InAs-based quantum dots.
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