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arXiv 0802.3443cond-mat.supr-con
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Fully Band Resolved Scattering Rate in MgB2 Revealed by Nonlinear Hall Effect and Magnetoresistance Measurements

Huan Yang, Yi Liu, Chenggang Zhuang, Junren Shi, Yugui Yao, Sandro Massidda, Marco Monni, Ying Jia, Xiaoxing Xi, Qi Li, Zi-Kui Liu, Qingrong Feng, Hai-Hu Wen

英文摘要:

We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong nonlinearity of the Hall effect and magnetoresistance have been found in clean samples, and they decrease gradually with the increase of disorders or temperature. By fitting the data to the theoretical model based on the Boltzmann equation and ab initio calculations for a four-band system, for the first time, we derived the scattering rates of these four bands at different temperatures and magnitude of disorders. Our method provides a unique way to derive these important parameters in multiband systems.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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