费米实验室主注入器时间结构多匝注入（带寄生纵向涂绘的微束团注入）的模拟
The Modeling of Time-Structured Multiturn Injection into Fermilab Main Injector (Microbunch Injection with Parasitic Longitudinal Painting)
摘要：
本文介绍了时间结构的多匝注入与8-GeV超导RF质子驱动器，或ILC式直线加速器，或项目X直线加速器的升级主注入器的建模。直线加速器和升级的主注入器之间的射频失配将在射频相位方向上引起寄生纵向涂敷。研究了在纵向空间电荷存在的情况下，单射频系统和双射频系统的几种不同的射频参数选择方案。利用ESME（2003）数值模拟方法对微束团注入进行了研究，发现通过选择合适的射频参数，双射频系统可以克服多圈注入过程中束流强度对空间电荷的限制。谐波比（RH = H_2/H_1）为2.0、电压比（RV = V_2/V_1）为0.5的双射频系统最有利于减小主注入器中空间电荷的纵向和横向效应。
英文摘要：
This paper presents the modeling of time-structured multiturn injection for an upgraded Main Injector with the 8-GeV Superconducting RF proton driver, or an ILC-style linac, or a Project-X linac. The Radio-Frequency mismatch between a linac and the upgraded Main Injector will induce parasitic longitudinal painting in RF-phase direction. Several different scenarios with a choice of different RF parameters for single RF system and double RF system in the presence of longitudinal space charge have been investigated. From the studies of microbunch injection with the aid of ESME (2003) numerical simulations, it is found that the dual RF system with a choice of appropriate RF parameters allows us to overcome the space-charge limitation set by beam intensity during the multiturn-injection process. A double RF system with a harmonic ratio (R_H = H_2/H_1) of 2.0 and a voltage ratio (R_V = V_2/V_1) of 0.5 are most favored to reduce both longitudinal and transverse effects of space charge in the Main Injector.
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