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arXiv 0802.2404cond-mat.supr-con
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单光子能量和milliKelvin温度下的微波介电损耗

Microwave Dielectric Loss at Single Photon Energies and milliKelvin Temperatures

Aaron D. O'Connell, M. Ansmann, R. C. Bialczak, M. Hofheinz, N. Katz, Erik Lucero, C. McKenney, M. Neeley, H. Wang, E. M. Weig, A. N. Cleland, J. M. Martinis

摘要:

非晶介电材料在非常低的温度和非常低的激发强度下的微波性能显示出显著的过量损耗。在这里,我们提出了一些常见的非晶和晶体的损耗角正切,测量在低温(T < 100 mK)与近单光子激发能,使用共面波导(CPW)和集总LC谐振器。可以使用两级状态(TLS)缺陷模型来理解这种损失。本文对半波长谐振器进行了电路分析,并从理论上分析了多层介质基片上半波长谐振器的能量耗散。

英文摘要:

The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss tangents of some common amorphous and crystalline dielectrics, measured at low temperatures (T < 100 mK) with near single-photon excitation energies, using both coplanar waveguide (CPW) and lumped LC resonators. The loss can be understood using a two-level state (TLS) defect model. A circuit analysis of the half-wavelength resonators we used is outlined, and the energy dissipation of such a resonator on a multilayered dielectric substrate is considered theoretically.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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