硅纳米通道中的Knudsen扩散
Knudsen Diffusion in Silicon Nanochannels
摘要：
通过单晶硅膜中直径为12 nm、长度为200 μ m的平行线性通道阵列对氦气和氩气流进行的测量表明，努森扩散型输运的努森数Kn从10^2变为10^7。在40 ~ 300 K的温度范围内，He和D_He/D_Ar ~ sqrt（m_Ar/m_He）的输运扩散系数D_He ~ sqrt（T）与温度和扩散物质质量之间的关系得到了经典的标度预测。偏离的渠道从一个圆柱形的形式，解决与透射电子显微镜下到亚纳米尺度，定量占一个减少的扩散系数相比，努森扩散在理想的管状渠道。通过Beskok和Karniadakis的统一流动模型，在Kn中描述了超过10个数量级的膜渗透实验，包括过渡流态。
英文摘要：
Measurements on helium and argon gas flow through an array of parallel, linear channels of 12 nm diameter and 200 micrometer length in a single crystalline silicon membrane reveal a Knudsen diffusion type transport from 10^2 to 10^7 in Knudsen number Kn. The classic scaling prediction for the transport diffusion coefficient on temperature and mass of diffusing species,D_He ~ sqrt(T), is confirmed over a T range from 40 K to 300 K for He and for the ratio of D_He/D_Ar ~ sqrt(m_Ar/m_He). Deviations of the channels from a cylindrical form, resolved with transmission electron microscopy down to subnanometer scales, quantitatively account for a reduced diffusivity as compared to Knudsen diffusion in ideal tubular channels. The membrane permeation experiments are described over 10 orders of magnitude in Kn, encompassing the transition flow regime, by the unified flow model of Beskok and Karniadakis.
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