SiGe湿化学蚀刻剂的应变选择性
Strain selectivity of SiGe wet chemical etchants
摘要：
研究了应变对两种SiGe湿法刻蚀剂NH_4OH：H_2O_2和H_2O_2刻蚀速率的影响。对于这两种蚀刻剂，我们发现，没有明显的应变选择性，即蚀刻速率不依赖于SiGe薄膜中的实际应变状态。相反，对于NH4OH：H2O2溶液，速率主要由Ge含量决定。最后，我们表明，这两种蚀刻剂是各向同性的，没有优先蚀刻的特定方面。
英文摘要：
We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants are isotropic with no preferential etching of particular facets.
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