硅中注入电子-空穴等离子体自压缩的直接证据
Direct evidence of the self-compression of injected electron-hole plasma in silicon
摘要：
通过空间扫描实验，获得了室温下硅p-n发光二极管电致发光强度的面分布。二极管的发射表面，由几个小的明亮的发射点和点外的弱发射区域表示，作为注入的电子-空穴等离子体在硅中的自压缩的直接证据。等离子体自压缩解释了注入的载流子集中到一个或几个强发射等离子体滴中。
英文摘要：
A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting dots and a weakly emitting area outside the dots, serves as a direct evidence of the self-compression of injected electron-hole plasma in silicon. The plasma self-compression explains concentration of injected carriers into one or a few strongly emitting plasma drops.
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