mK小于30时GaAs二维孔洞中类金属行为的消失
Disappearance of the metal-like behavior in GaAs two-dimensional holes below 30 mK
摘要：
零场温度依赖性的二维孔的电阻率观察到表现出两个定性不同的特性，对于一个固定的载流子密度，只有金属的行为，所谓的金属-绝缘体过渡的预期。当$T$从150 mK降低到0.5 mK时，当温度降低到低于$\sim$ 30 mK时，电阻率相对于$T$的导数的符号从正变为负，并且电阻率随着冷却到0.5 mK而连续上升，这表明从类金属到类绝缘体的交叉。
英文摘要：
The zero-field temperature-dependence of the resistivity of two-dimensional holes are observed to exhibit two qualitatively different characteristics for a fixed carrier density for which only the metallic behavior of the so-called metal-insulator transition is anticipated. As $T$ is lowered from 150 mK to 0.5 mK, the sign of the derivative of the resistivity with respect to $T$ changes from being positive to negative when the temperature is lowered below $\sim$30 mK and the resistivity continuously rises with cooling down to 0.5 mK, suggesting a crossover from being metal-like to insulator-like.
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