ZnO/CdS/Cu（In，Ga）（S，Se）$_2$异质结和Cr/Cu（In，Ga）（S，Se）$_2$肖特基接触中与表面钝化无关的能带弯曲
Band Bending Independent of Surface Passivation in ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ Heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky Contacts
摘要：
我们利用导纳谱和深能级瞬态谱研究了ZnO/CdS/Cu（In，Ga）（S，Se）$_2$异质结和Cr/Cu（In，Ga）（S，Se）$_2$肖特基接触的电子特性。我们的工作集中在这些系统中常见的能量分布的缺陷状态的起源。在空气退火或湿热处理时，所述缺陷态的激活能连续地移动，并且是Cu（In，Ga）（S，Se）$_2$基结中能带弯曲程度的有价值的量度。我们证明，在文献中报道的Cu（In，Ga）（S，Se）$_2$层内的能带弯曲在空气暴露后变得最小，在形成肖特基接触或异质结后返回。较早的现象原来是独立的表面钝化由于CdS浴沉积。
英文摘要：
We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky contacts. Our work concentrates on the origin of an energy-distributed defect state commonly found in these systems. The activation energy of the defect state addressed continuously shifts upon air annealing or damp-heat treatment and is a valuable measure of the degree of band bending in Cu(In,Ga)(S,Se)$_2$-based junctions. We demonstrate that the band bending within the Cu(In,Ga)(S,Se)$_2$ layer, reported in the literature to become minimal after air exposure, returns after the formation of either a Schottky contact or a heterojunction. The earlier phenomenon turns out to be independent of a surface passivation due to the CdS bath deposition.
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