半导体中的屏蔽和杂质电离能
Screening and impurity ionization energy in semiconductors
摘要：
在计算电离能时，通常忽略带电杂质离子周围的微观静电场。电离能被认为是等于一个孤独的杂质原子的电离能。这里考虑了半导体中带电杂质离子周围的静电场的能量。结果表明，该场的能量有助于降低有效电离能。在足够高的载流子浓度下，有效电离能变为零。
英文摘要：
Usually microscopic electrostatic field around charged impurity ions is neglected when the ionization energy is concerned. The ionization energy is considered to be equal to that of a lonely impurity atom. Here the energy of the electrostatic field around charged impurity ions in semiconductor is taken into account. It is shown that the energy of this field contributes to decrease in the effective ionization energy. At high enough current carriers concentration the effective ionization energy becomes zero.
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