在低能尺度下，绝缘Si：P中的电荷输运主要由局域施主电子态之间的激活跳跃控制。因此，具有电子-电子相互作用的无序系统的理论模型适合于解释电导率谱。用一种新开发的技术，我们已经测量了复杂的宽带微波电导率的Si：P从100 MHz到5 GHz的磷浓度$n/n_c$从0.56到0.95相对于临界值$n_c=3.5\times 10^{18}$ cm $^{-3}$对应的金属-绝缘体的转变由掺杂驱动的宽范围。在我们的基础温度为$T =1.1$ K的样品是在零声子制度，在那里他们表现出超线性的频率依赖性的电导率表示的库仑间隙中的杂质态的密度的影响。在更高的掺杂$n\to n_c$，电导率幂律$\sig(ω)\simω^α$的突然下降被观察到。介电函数$\eps$在掺杂后按照（$1-n/n_c$）中的幂律增加。在高温下的动态响应也进行了研究。
英文摘要：
At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate to interpret the electric conductivity spectra. With a newly developed technique we have measured the complex broadband microwave conductivity of Si:P from 100 MHz to 5 GHz in a broad range of phosphorus concentration $n/n_c$ from 0.56 to 0.95 relative to the critical value $n_c=3.5\times 10^{18}$ cm$^{-3}$ corresponding to the metal-insulator transition driven by doping. At our base temperature of $T =1.1$ K the samples are in the zero-phonon regime where they show a super-linear frequency dependence of the conductivity indicating the influence of the Coulomb gap in the density of the impurity states. At higher doping $n\to n_c$, an abrupt drop in the conductivity power law $\sig(ω)\simω^α$ is observed. The dielectric function $\eps$ increases upon doping following a power law in ($1-n/n_c$). Dynamic response at elevated temperatures has also been investigated.
Exact multi-electronic electron-concentration dependent ground-states for disordered two-dimensional two-band systems in presence of disordered hoppings and finite on-site random interactions
A Flickering Resonance Degeneracy on Entropy-Ruled Charge Transport in the Extended Hopping Sites for Biological Systems: Role of Static-to-Dynamic Disorder Transition
KPR Institute of Engineering and Technology（KPR工程学院与技术学院）
