稀磁半导体（Ga，Mn）Sb中的非弹性散射和自旋极化
Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb
摘要：
点接触Andreev反射（PCAR）技术已经被用来测量一些稀磁半导体的自旋极化，如窄带（In，Mn）Sb和宽禁带（Ga，Mn）As。虽然在（In，Mn）Sb的常规Andreev反射已被证明，在（Ga，Mn）作为准粒子态密度（DOS）的扩大已被观察到，可能是由于非弹性散射效应。在这里，我们研究的自旋极化，磁性和输运性质的外延生长的（Ga，Mn）Sb薄膜的居里温度为10 K。测得自旋极化率为57+/-5%。（Ga，Mn）Sb的谱线展宽也被观察到。
英文摘要：
The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ~ 10K. The spin polarization of 57+/-5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.
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