PHENIX硅条纹传感器的辐射损伤研究
Radiation Damage Study for PHENIX Silicon Stripixel Sensors
摘要：
BNL开发的硅条纹传感器将作为RHIC-PHENIX硅顶点跟踪器（VTX）的一部分安装。RHIC II操作提供高达2x10^32 /cm 2/s的亮度，因此硅条纹传感器将暴露于大量的辐射。VTX最成问题的辐射效应是漏电流的增加，这会降低信噪比并可能使读出电子器件饱和。我们使用与CERN-RD 48相同的二极管研究了辐射损伤。首先，再现了CERN-RD 48的辐照能量密度和漏电流增加之间的比例关系。在此基础上，进行了带像素传感器的束流实验，发现其漏电流与参考二极管的漏电流一样增大。在2006年的运行过程中，还在PHENIX相互作用区域（IR）照射了stripixel传感器。我们发现积分亮度与漏电流增加所测得的注量之间也有同样的关系。RHIC II运行10年后，预期的注量为3-6x10^12 Neq/cm 2（1 MeV中子当量）。由于这种预期的暴露，将PHENIX中的工作温度设置为T< 0 deg。为了避免前置放大器饱和，需要用C来抑制漏电流。
英文摘要：
Silicon stripixel sensors which were developed at BNL will be installed as part of the RHIC-PHENIX silicon vertex tracker (VTX). RHIC II operations provide luminosity up to 2x10^32 /cm2/s so the silicon stripixel sensors will be exposed to a significant amount of radiation. The most problematic radiation effect for VTX is the increase of leakage current, which degrades the signal to noise ratio and may saturate the readout electronics. We studied the radiation damage using the same diodes as CERN-RD48. First, the proportionality between the irradiation fluence and the increase of leakage current of CERN-RD48 was reproduced. Then beam experiments with stripixel sensor were done in which leakage current was found to increase in the same way as that of thereference diode. A stripixel sensor was also irradiated at the PHENIX interaction region (IR) during the 2006 run. We found the same relation between the integrated luminosity and determined fluence from increase of leakage current. The expected fluence is 3-6x10^12 Neq/cm2 (1 MeV neutron equivalent) in RHIC II operations for 10 years. Due to this expected exposure, setting the operating temperature in PHENIX to T< 0 deg. C to suppress leakage current is needed to avoid saturation of preamplifiers.
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