NanoFET传感器的标度律
Scaling Laws for NanoFET Sensors
摘要：
半导体纳米线和碳纳米管响应于带电分子的结合的敏感电导变化提供了一种新的传感模式，其通常被表示为纳米FET传感器。在本文中，我们研究了纳米片FET传感器的标度律，通过简化纳米片的随机电阻网络与分子受体坐在晶格网站。纳米线/管FET被包括作为器件宽度变小的限制情况。计算机模拟表明，结合分子施加的场效应强度对标度行为有重要影响。当场效应强度较小时，纳米FET具有较小的尺寸和形状依赖性。相反，当场效应强度变强时，存在用于电荷累积FET的较低检测阈值和用于电荷耗尽FET传感器的较高检测阈值。在这些阈值下，纳米FET器件经历低灵敏度和大灵敏度之间的转变。这些阈值可能会决定纳米FET传感器的检测极限，而可以通过设计具有非常短的源漏距离和大宽度的器件来消除。
英文摘要：
The sensitive conductance change of semiconductor nanowires and carbon nanotubes in response to binding of charged molecules provide a novel sensing modality which is generally denoted as nanoFET sensors. In this paper, we study the scaling laws of nanoplate FET sensors by simplifying nanoplates as random resistor networks with molecular receptors sitting on lattice sites. Nanowire/tube FETs are included as the limiting cases where the device width goes small. Computer simulations show that the field effect strength exerted by the binding molecules has significant impact on the scaling behaviors. When the field effect strength is small, nanoFETs have little size and shape dependence. In contrast, when the field-effect strength becomes stronger, there exists a lower detection threshold for charge accumulation FETs and an upper detection threshold for charge depletion FET sensors. At these thresholds, the nanoFET devices undergo a transition between low and large sensitivities. These thresholds may set the detection limits of nanoFET sensors, while could be eliminated by designing devices with very short source-drain distance and large width.
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