杂质粒子在玻色子莫特绝缘体背景上的局域化
Localization of an impurity particle on a boson Mott insulator background
摘要：
本文研究了单粒子在三维立方光晶格上的跳跃行为，其中存在一个由玻色子组成的莫特绝缘体。我们计算了杂质与背景玻色子之间的临界相互作用强度，超过该强度，就会形成束缚态（极化子）。在理想莫特绝缘体的极限下给出了精确的结果，其中极化子的形成等价于杂质局域化。我们计算了晶格各向异性，较高的杂质带，和波动的莫特绝缘体上的本地化阈值的影响。我们认为，我们的结果可以通过杂质粒子的RF光谱实验检查。
英文摘要：
We investigate the behavior of a single particle hopping on a three dimensional cubic optical lattice in the presence of a Mott insulator of bosons in the same lattice. We calculate the critical interaction strength between the impurity and background bosons, beyond which there is bound state (polaron) formation. We give exact results in the limit of a perfect Mott insulator, where polaron formation is equivalent to impurity localization. We calculate the effects of lattice anisotropy, higher impurity bands, and fluctuations of the Mott insulator on the localization threshold. We argue that our results can be checked experimentally by RF spectroscopy of impurity particles.
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