1.11亿像素背照式探测器和相机的实现及应用
Realization and application of a 111 million pixel backside-illuminated detector and camera
摘要：
在半导体技术协会（STA）设计并测试了具有9 μ m平方像素和16个输出的全晶片、10，580 $\times$ 10，560像素（95 $\times$ 95 mm）CCD。该芯片于2006年在DALSA成功制造，并在这里给出了一些性能结果。该计划由海军研究办公室通过美国海军天文台为其下一代天体测量巡天计划要求的小型企业研究创新（SBIR）计划资助。使用Leach电子器件，1.11亿像素的低读取噪声输出在0.9 MHz时需要16秒。STA开发的替代电子设备允许在20 MHz下读取。一些修改的设计，包括抗晕功能，大量的输出，并使用p沟道材料的空间应用进行了讨论。
英文摘要：
A full-wafer, 10,580 $\times$ 10,560 pixel (95 $\times$ 95 mm) CCD was designed and tested at Semiconductor Technology Associates (STA) with 9 um square pixels and 16 outputs. The chip was successfully fabricated in 2006 at DALSA and some performance results are presented here. This program was funded by the Office of Naval Research through a Small Business Innovation in Research (SBIR) program requested by the U.S. Naval Observatory for its next generation astrometric sky survey programs. Using Leach electronics, low read-noise output of the 111 million pixels requires 16 seconds at 0.9 MHz. Alternative electronics developed at STA allow readout at 20 MHz. Some modifications of the design to include anti-blooming features, a larger number of outputs, and use of p-channel material for space applications are discussed.
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