最佳杂散场诱导掩埋铁栅增强电子自旋进动
Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates
摘要：
利用铁栅产生的杂散磁场改变InGaAs/GaAs量子阱电子在外加磁场中的自旋进动频率。通过使用蚀刻工艺将栅极直接定位在量子阱的平面中，杂散场对自旋旋进的影响与先前使用顶栅结构的研究结果相比显着增加。与数值模拟一致，杂散场引起的进动频率随着铁磁栅极之间的间隙减小而增加。非均匀杂散场导致额外的自旋退相。
英文摘要：
The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In line with numerical simulations, the stray-field-induced precession frequency increases as the gap between the ferromagnetic gates is reduced. The inhomogeneous stray field leads to additional spin dephasing.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
