连续位错晶体中的有效位错线。I.材料非完整性
Effective dislocation lines in continuously dislocated crystals. I. Material anholonomity
摘要：
本文提出了一种连续的几何描述，描述了具有许多位错和由位错分布产生的二次点缺陷的布拉维单晶。也就是说，它是区分，基于自己的近藤和克朗斯Gedanken实验错位的机构，一个非完整的三元组线性无关的向量场。三元组定义了缺陷晶体的局部晶体学方向以及单个位错的Burgers矢量的连续对应物。其次，二次点缺陷对许多位错的分布的影响进行建模，通过处理这些本地的晶体学方向，以及位于这样的黎曼材料空间，成为一个欧几里德3-流形时，位错不存在的Burgers电路。这种方法的一些后果进行了讨论。
英文摘要：
A continuous geometric description of Bravais monocrystals with many dislocations and secondary point defects created by the distribution of these dislocations is proposed. Namely, it is distinguished, basing oneself on Kondo and Kroners Gedanken Experiments for dislocated bodies, an anholonomic triad of linearly independent vector fields. The triad defines local crystallographic directions of the defective crystal as well as a continuous counterpart of the Burgers vector for single dislocations. Next, the influence of secondary point defects on the distribution of many dislocations is modeled by treating these local crystallographic directions as well as Burgers circuits as those located in such a Riemannian material space that becomes an Euclidean 3-manifold when dislocations are absent. Some consequences of this approach are discussed.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
