On the reliability of linear band structure methods

Thermoelectrics properties of two-dimensional materials with combination of linear and nonlinear band structures

We investigate thermoelectric (TE) properties of two-dimensional materials possessing two Dirac bands (a Dirac band) and a nonlinear band within the three-(two-)band model using linearized Boltzmann transport theory and relaxation time approximation. In the three-band model, we find that combinations of Dirac bands with a heavy nonlinear band, either a parabolic or a pudding-mold band, does not give much difference in their TE performance. The apparent difference only occurs in the position of the nonlinear band that leads to the maximum figure of merit ($ZT$). The optimum $ZT$ of the three-ba…

Simple linear response model for predicting energy band alignment of two-dimensional vertical heterostructure

The Anderson and midgap models are often used in the study of semiconductor heterojunctions, but for van der Waals (vdW) vertical heterostructures they have shown only very limited success. Using the group-IV monochalcogenide vertical heterostructures as a prototypical system, we propose a linear response model and compare the effectiveness of these models in predicting density functional theory (DFT) band alignments, band types and bandgaps. We show that the DFT band alignment is best predicted by the linear response model, which falls in between the Anderson and midgap models. Our proposed m…

Polaron-induced band renormalization due to linear and quadratic electron-phonon coupling

We present a novel approach to electron-lattice interaction beyond the linear-coupling regime. Based on the solution of a Holstein-Peierls-type model, we derive explicit analytical expressions for the eigenvalue spectrum of the Hamiltonian, resulting in a narrowing of bands as a function of temperature. Our approach enables the intuitive interpretation in terms of quasiparticles, i.e. polaron bands and dressed-phonon frequencies. Being nonperturbative, the formalism also applies in the strong-coupling case. We apply it to the organic crystal naphthalene, with the coupling strengths obtained by…

通过S掺杂工程化制备少层石墨烯：从维持线性色散到平坦带

Engineering the band structure of few-layer graphene by S-doping: from linear dispersion to impurity flat bands

研究通过第一性原理计算探讨S掺杂对单层、双层和四层石墨烯电子性质的影响，发现S掺杂可调控带结构，使少层石墨烯从金属态转变为绝缘体，并从线性色散转变为平坦带，为电池和氧还原反应应用提供新材料。

Linear scaling calculation of band edge states and doped semiconductors

Linear scaling methods provide total energy, but no energy levels and canonical wavefuctions. From the density matrix computed through the density matrix purification methods, we propose an order-N (O(N)) method for calculating both the energies and wavefuctions of band edge states, which are important for optical properties and chemical reactions. In addition, we also develop an O(N) algorithm to deal with doped semiconductors based on the O(N) method for band edge states calculation. We illustrate the O(N) behavior of the new method by applying it to boron nitride (BN) nanotubes and BN nanot…

Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

The linear combination of bulk bands method recently introduced by Wang, Franceschetti and Zunger [Phys. Rev. Lett.78, 2819 (1997)] is applied to a calculation of energy bands and optical constants of (GaAs)$_n$/(AlAs)$_n$ and (GaAs)$_n$/(vacuum)$_n$ (001) superlattices with n ranging from 4 to 20. Empirical pseudopotentials are used for the calculation of the bulk energy bands. Quantum-confined induced shifts of critical point energies are calculated and are found to be larger for the GaAs/vacuum system. The $E_1$ peak in the absorption spectra has a blue shift and splits into two peaks for d…