无序半导体异质结构单光子关联的解析分析
Analytical Analysis of Single-Photon Correlations Emitted by Disordered Semiconductor Heterostructures
摘要：
在最近的出版物[物理。97，227402（2006），cond-mat/0611411]，已经在数值上证明了半导体量子阱中的长程无序势可以经由自发发射光的单光子干涉测量法可靠地重建。本文提出了一个简化的独立二能级系统的分析模型，以便更详细地研究重建过程。借助该模型，可以解析地计算出所测得的光子关联，并可以系统地研究诸如无序长度尺度、所用光波长或光斑尺寸等参数的影响。此外，角度分辨的单光子相关性和无序势之间的关系可以理解和测量的信号预计将密切相关的特征强度和长度尺度的障碍。
英文摘要：
In a recent publication [Phys. Rev. Lett. 97, 227402 (2006), cond-mat/0611411], it has been demonstrated numerically that a long-range disorder potential in semiconductor quantum wells can be reconstructed reliably via single-photon interferometry of spontaneously emitted light. In the present paper, a simplified analytical model of independent two-level systems is presented in order to study the reconstruction procedure in more detail. With the help of this model, the measured photon correlations can be calculated analytically and the influence of parameters such as the disorder length scale, the wavelength of the used light, or the spotsize can be investigated systematically. Furthermore, the relation between the proposed angle-resolved single-photon correlations and the disorder potential can be understood and the measured signal is expected to be closely related to the characteristic strength and length scale of the disorder.
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