铁磁半导体（Ga，Mn）As中磁性纳米团簇的随机电报噪声
Random telegraph noise from magnetic nanoclusters in the ferromagnetic semiconductor (Ga,Mn)As
摘要：
对铁磁半导体（Ga，Mn）As的低频电噪声的测量表明，在低温下，集成噪声增强。对于中等局部化，我们发现在整个研究温度范围内（4.2K <T <70K）的1/f归一化功率谱密度。然而，对于更强的本地化和高密度的Mn晶体，我们观察到洛伦兹噪声谱伴随着随机电报噪声。磁场依赖性和退火研究表明，间隙Mn缺陷与替代Mn原子耦合，形成纳米级磁性团簇，其特征在于约20玻尔磁子的净矩，其波动调制空穴传输。
英文摘要：
Measurements of the low frequency electrical noise in the ferromagnetic semiconductor (Ga,Mn)As reveal an enhanced integrated noise at low temperature. For moderate localization, we find a 1/f normalized power spectrum density over the entire range of temperatures studied (4.2K < T < 70K). However, for stronger localization and a high density of Mn interstitials, we observe Lorentzian noise spectra accompanied by random telegraph noise. Magnetic field dependence and annealing studies suggest that interstitial Mn defects couple with substitutional Mn atoms to form nanoscale magnetic clusters characterized by a net moment of about 20 Bohr magnetons whose fluctuations modulate hole transport.
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