TTF-TCNQ中的重整化带宽是结构的还是电子的？- 角相关NEXAFS研究
Are the renormalized band widths in TTF-TCNQ of structural or electronic origin? - An angular dependent NEXAFS study
摘要：
我们已经进行了依赖于角度的近边X射线吸收精细结构测量的俄歇电子产率模式的相关准一维有机导体TTF-TCNQ，以确定在最上层的表面层的分子的取向。我们发现，相对于一维轴的分子的倾斜角基本上是相同的散装。因此，我们可以排除表面弛豫作为重整化带宽的起源，这是从一维哈伯德模型内的光电发射数据的分析推断。因此，最近的理论结果得到证实，调用远程库仑排斥作为替代的解释，理解TTF-TCNQ的光谱色散定量扩展哈伯德模型。
英文摘要：
We have performed angle-dependent near-edge x-ray absorption fine structure measurements in the Auger electron yield mode on the correlated quasi-one-dimensional organic conductor TTF-TCNQ in order to determine the orientation of the molecules in the topmost surface layer. We find that the tilt angles of the molecules with respect to the one-dimensional axis are essentially the same as in the bulk. Thus we can rule out surface relaxation as the origin of the renormalized band widths which were inferred from the analysis of photoemission data within the one-dimensional Hubbard model. Thereby recent theoretical results are corroborated which invoke long-range Coulomb repulsion as alternative explanation to understand the spectral dispersions of TTF-TCNQ quantitatively within an extended Hubbard model.
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