通过退火改善HTc约瑟夫森结（HTc JJ）：空位-间隙湮没的作用
Improving HTc Josephson Junctions (HTc JJ) by annealing: the role of vacancy-interstitial annihilation
摘要：
本文研究了离子辐照高温约瑟夫森结（HTc JJ）输运性质的退火效应。低温退火（80摄氏度）增加JJ转变温度（TJ）和Ic·Rn乘积，其中Ic是临界电流，Rn是正常电阻。我们发现，在JJ特性的蔓延可以降低足够长的退火时间。使用随机游走数值模拟，我们表明，特征退火时间和JJ特性的扩展的演变可以解释由空位间隙湮没过程，而不是由氧扩散的。
英文摘要：
We have studied the annealing effect in transport properties of High temperature Josephson Junctions (HTc JJ) made by ion irradiation. Low temperature annealing (80 degrees Celsius) increases the JJ transition temperature (TJ) and the Ic.Rn product, where Ic is the critical current and Rn the normal resistance. We found that the spread in JJ characteristics can be lowered by sufficient long annealing times. Using random walk numerical simulations, we showed that the characteristic annealing time and the evolution of the spread in JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one.
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