The physical origin of frequency dependence in elastic constants, which are often found in an ultrasound propagation in filled skutterudites and clathrate compounds, is investigated theoretically. This dependence arises from a coupling between the acoustic phonon and some optical phonons, which strongly interact with electrons. Using a self-consistent ladder approximation together with a pseudofermion mapping of the phonon to the single site Holstein Anderson model, a soft mode of the optical phonon at zero frequency is shown to emerge. The temperature dependence of the spectral weight of this soft mode shows an activation-type behavior, which is characterized by the optical phonon frequency. These features can generate the frequency dependence and the shoulder in the elastic constants observed in some filled skutterudites and clathrate compounds.
Anisotropic phonon conduction and lattice distortions in CMR-type bilayer manganite (La$_{1-z}$Pr$_{z}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ (z=0,0.2,0.4 and 0.6) single crystals
本文系统地研究了（La $_{1-z}$ Pr $_{z}$）$_{1.2}$ Sr $_{1.8}$ Mn $_{2}$ O $_{7}$（$z$（Pr）= 0.2，0.4）单晶的热导率随温度和磁场的变化。和0.6。晶格畸变由于Pr-取代和各向异性的热导率在双层锰氧化物中的不同的弛豫模型的基础上提出的金属和绝缘状态的局部晶格畸变的Maderda等。巨磁热效应的缩放作为磁化强度的函数，并讨论了由于Pr-取代的$e_g$ -电子轨道状态的占领的系统变化的基础上。
Elastic Soft Mode and Electric Quadrupole Response in Excitonic Insulator Candidate (Ta$_{0.952}$V$_{0.048}$)$_2$NiSe$_5$: Contribution of Electron-Phonon Interaction
我们对（Ta $_{0.952}$ V $_{0.048}$）$_2$ NiSe $_5$进行了超声测量，以研究区中心声学声子对结构和可能的激子跃迁的贡献。用不可约表示$B_\mathrm{2g}$表示的横向弹性常数$C_{55}$在高于$T_\mathrm{s} = 280$ K的转变温度时表现出超过90%的软化，表明相应TA声子的软模。基于四极响应的分析表明，如果实现激子跃迁，除了导带和价带之间的杂化作用外，电子-声子相互作用也对激子跃迁有贡献。
High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu$_{0.02}$Bi$_2$Se$_3$
利用时域太赫兹磁谱研究了拓扑绝缘体Cu $_{0.02}$ Bi $_2$ Se $_3$和Bi $_2$ Se $_3$薄膜的低频光学响应。与场和频率的依赖性，这样的实验提供了足够的信息来测量多个导电沟道的迁移率和载流子密度同时。我们观察到尖锐的回旋共振（CR）在这两种材料。掺入Cu $_{0.02}$ Bi $_2$ Se $_3$中的少量Cu诱导了仅具有\textit{single}型导电的真正的体绝缘体，其具有总片载流子密度$\sim4.9\times10^{12}/$ cm $^{2}$和高达4000 cm $^{2}/$ V $\cdot$ s的迁移率。这是一致的传导从两个几乎相同的拓扑表面状态（TSS）的顶部和底部的膜与化学势$\sim$ 145毫电子伏以上的狄拉克点和散装的差距。CR在高场时变宽，我们将这种效应归因于电子-声子相互作用。这种分配是支持一个扩展的德鲁德模型分析的零场德鲁德电导。相比之下，在正常的Bi $_2$硒$_3$薄膜中观察到两个导电通道，我们开发了一种自洽的分析方法来区分占主导地位的TSS和共存的琐碎的体/2DEG状态。我们在Cu $_{0.02}$ Bi $_2$ Se $_3$上的高分辨率法拉第旋转光谱为在实验可实现的条件下观察量子化法拉第旋转铺平了道路，以将化学势推到最低的朗道能级。
