反点阵AlAs二维电子中的反常巨压阻效应
Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices
摘要：
一个AlAs二维电子系统图案化的反点晶格表现出巨大的压阻（GPR）的效果，与在未图案化的区域中观察到的压阻相反的符号。我们追踪这种异常GPR的起源的反点晶格中的非均匀应变和排斥的电子占据两个导带谷从不同区域的样品。这类似于众所周知的巨磁电阻（GMR）效应，谷起自旋的作用，应变起磁场的作用。
英文摘要：
An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field.
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