有机半导体器件中的负电容：双极注入和电荷复合机理
Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism
摘要：
我们报告的负电容在低频的有机半导体二极管，并表明它只出现在双极注入条件下。我们用电子-空穴湮灭引起的复合电流定量地解释了这一现象。简单地添加的复合电流的良好建立的模型中存在的陷阱的空间电荷限制的电流，产生良好的拟合实验测得的导纳数据。所提取的特征复合时间对偏置电压的依赖性指示由局部陷阱介导的复合过程。
英文摘要：
We report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. We account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation. Simple addition of the recombination current to the well established model of space charge limited current in the presence of traps, yields excellent fits to the experimentally measured admittance data. The dependence of the extracted characteristic recombination time on the bias voltage is indicative of a recombination process which is mediated by localized traps.
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