通过中子辐照薄膜的磁电阻测量探讨MgB2中的电子-声子耦合
Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films
摘要：
我们报告的磁阻（MR）测量MgB 2和相应的从头计算的完整帐户，我们建议，这种组合可以是一个有用的工具，探测电子-声子耦合。我们得到了很好的定量协议之间的高场测量中子辐照外延薄膜和计算内布洛赫-玻尔兹曼输运理论在很宽的范围内的磁场（0-28 T）和温度（40-300 K），并作为一个功能的字段取向。实验观察到的面内和面外MR之间的交叉作为无序或温度的函数被很好地再现，表明与声子的无序和相互作用强烈影响s-载流子的散射率。
英文摘要：
We report magnetoresistance (MR) measurements on MgB2 and the corresponding full account from ab-initio calculations; we suggest that this combination can be a useful tool to probe electron- phonon coupling. We obtain good quantitative agreement between high field measurements on neutron irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of s-carriers.
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