含强杂质纳米线的电阻分布
Distribution of the resistance of nanowires with strong impurities
摘要：
受最近纳米线和碳纳米管实验的启发，我们从理论上研究了强点状杂质对有限长量子线线性电阻R的影响。电荷输运受到库仑阻塞和共隧穿的限制。ln R是缓慢自平均和非高斯的。它的分布是Gumbel与有限大小的修正，我们计算。在低温下，该分布类似于很久以前在杂质半导体中发现的可变范围跳跃（VRH）行为。我们表明，由Raikh和Ruzin的结果不适用。有限尺寸修正量随长度L的衰减类似于1/ln L。在更高的温度下，这种制度被新的法律所取代，有限尺寸修正的形状发生了强烈的变化：如果电子相互作用很弱，那么对于含有几十种杂质的电线来说，修正已经消失了。
英文摘要：
Motivated by recent experiments on nanowires and carbon nanotubes, we study theoretically the effect of strong, point-like impurities on the linear electrical resistance R of finite length quantum wires. Charge transport is limited by Coulomb blockade and cotunneling. ln R is slowly self-averaging and non Gaussian. Its distribution is Gumbel with finite-size corrections which we compute. At low temperature, the distribution is similar to the variable range hopping (VRH) behaviour found long ago in doped semiconductors. We show that a result by Raikh and Ruzin does not apply. The finite-size corrections decay with the length L like 1/ln L. At higher temperatures, this regime is replaced by new laws and the shape of the finite-size corrections changes strongly: if the electrons interact weakly, the corrections vanish already for wires with a few tens impurities.
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