Landau量子化石墨烯中的重入近藤效应
Reentrant Kondo effect in Landau quantized graphene
摘要：
我们研究了安德森杂质在朗道量子化石墨烯中的相互作用，特别强调了化学势的影响。在从玻色子平均场论中，我们发现了通过改变化学势或门电压的重入近藤行为。在朗道能级之间，态密度被抑制，通过改变石墨烯的费米能，我们从金属区域过渡到半导体区域。因此，相应的近藤行为也受到影响。f-能级谱函数揭示了导带中的朗道能级和近藤共振的存在。
英文摘要：
We have studied the interplay of an Anderson impurity in Landau quantized graphene, with special emphasis on the influence of the chemical potential. Within the slave-boson mean-field theory, we found reentrant Kondo behaviour by varying the chemical potential or gate voltage. Between Landau levels, the density of states is suppressed, and by changing the graphene's Fermi energy, we cross from metallic to semiconducting regions. Hence, the corresponding Kondo behaviour is also influenced. The f-level spectral function reveals both the presence of Landau levels in the conduction band and the Kondo resonance.
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