外场、Hydrostatic Pressure和杂质对矩形势垒的影响
Rectangular Potential Barrier Affected by External Fields, Hydrostatic Pressure and Impurities
摘要：
在这项工作中的影响的电场和磁场的隧道粒子在一个矩形势垒显示，我们已经考虑到存在的杂质在势垒中心和静水压力的影响，平行于势垒高度考虑BenDaniel-Duke边界条件。假设粒子在GaAs-AlxGa 1-xAs-GaAs异质结构内部移动，则由于杂质浓度和流体静压的存在，透射系数的变化是明显的。由于杂质的存在而产生的电势用二次多项式函数近似，该函数解决了通过大量修改透射系数而产生的不连续性。
英文摘要：
In this work the influence of the electric and magnetic fields over a tunneling particle in a rectangular potential barrier is shown, we have taken into account the presence of an impurity at the barrier center and the effects of a hydrostatic pressure parallel to the barrier height considering the BenDaniel-Duke boundary conditions. Given that the particle is moving inside a GaAs-AlxGa1-xAs-GaAs heterostructures it is evident a change in the transmission coefficient due to the impurity concentration and the presence of the hydrostatic pressure. The potential due to the presence of the impurity is approximate with a second degree polynomial function that resolves the discontinuity generated by heavily modifying the transmission coefficient.
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