CdTe：Cl晶锭生长后退火获得半绝缘晶体的基本原理
Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals
摘要：
研究了CdTe：Cl晶锭生长后冷却过程中的退火过程。退火分两个阶段进行：高温阶段，在晶体和挥发性组分的蒸气之间的热力学平衡下建立近似相等的氯和镉空位浓度，和低温阶段，带电缺陷相互作用形成中性协会。在高温阶段，对于不同的铸锭冷却速率，确定了获得半绝缘晶体所需的氯浓度。找到了锭中氯浓度[Cl + Te]与高温退火温度的关系，得到了锭生长后退火中载流子寿命和漂移迁移率与温度和镉蒸气压的关系。
英文摘要：
The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations established at the thermodynamic equilibrium between the crystal and vapors of volatile components, and a low-temperature stage, with charged defects interacting to form neutral associations. The chlorine concentrations necessary to obtain semi-insulating crystals were determined for various ingot cooling rates in the high temperature stage. The dependence of the chlorine concentration [Cl+Te] in the ingot on the temperature of annealing in the high-temperature stage was found. The carrier lifetimes and drift mobilities were obtained in relation to the temperature and cadmium vapor pressure in the postgrowth annealing of the ingot.
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